Nanodevices Research Group

Theme/Field

The research target is to realize nanometer-scale devices with novel concept and ultimate performance such as ultra-low power, high functionality, high sensitivity, and high precision for future science and ICT society.

Message

Dr. Katsuhiko Nishiguchi
Group Leader
Dr. Katsuhiko Nishiguchi

We are pursuing to create electronic devices with ultimate performance and novel functions by using nanofabrication and new material technology, which cannot be achieved with conventional devices and transistors. We are developing silicon-based nanodevices for high-accuracy single-electron transfer and high-sensitivity single-electron detection which enables us to control and understand electronic devise on the single-electron level. These devices will be promising for quantum electrical current standards, ultrasensitive and functional sensors, and low-power circuits. Moreover, new techniques and concepts such as single-electron feedback control and error correction are also explored. We are also trying to develop a variety of new devices and technologies such as silicon/new material hybrid devices, devices utilizing spin/valley states, block copolymer lithography, and organic devices.

See the Group website

Member

Dr. Akira Fujiwara

Dr. Akira Fujiwara

Dr. Toshiaki Hayashi

Dr. Toshiaki Hayashi

Hirotaka Tanaka

Hirotaka Tanaka

Dr. Jin-ichiro Noborisaka

Dr. Jin-ichiro Noborisaka

Dr. Gento Yamahata

Dr. Gento Yamahata

Dr. Kensaku Chida

Dr. Kensaku Chida

Dr. Rento Osugi

Dr. Rento Osugi

Dr. Takase Shimizu

Dr. Takase Shimizu

Topics by Group

Press Release

Publications

Publications in 2020

  1. S. P. Giblin, E. Mykkanen, A. Kemppinen, P. Immonen, A. Manninen, M. Jenei, M. Mottonen, G. Yamahata, A. Fujiwara, and M. Kataoka

    Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility

    Metrologia 57 (2), 025013 (2020).

  2. H. Sumikura, K. Hirama, K. Nishiguchi, A. Shinya, and M. Notomi

    Highly nitrogen-vacancy doped diamond nanostructures fabricated by ion implantation and optimum annealing

    APL Mater. 8 (3), 031113 (2020).

  1. G. Yamahata, S. Ryu, N. Johnson, H. S. Sim, A. Fujiwara, and M. Kataoka

    Picosecond coherent electron motion in a silicon single-electron source

    Nat. Nanotechnol. 14 (11) 1019-+ (2019).

  2. N. Johnson, G. Yamahata, and A. Fujiwara

    Measurement of the curvature and height of the potential barrier for a dynamic quantum dot

    Appl. Phys. Lett. 115 (16), 162103 (2019).

  3. S. P. Giblin, A. Fujiwara, G. Yamahata, M. H. Bae, N. Kim, A. Rossi, M. Mottonen, and M. Kataoka

    Evidence for universality of tunable-barrier electron pumps

    Metrologia 56 (4), 044004 (2019).

  4. C. Emary, L. A. Clark, M. Kataoka, and N. Johnson

    Energy relaxation in hot electron quantum optics via acoustic and optical phonon emission

    Phys. Rev. B 99 (4), 045306 (2019).

  1. R. Ohsugi, H. Omi, Y. Krockenberger, and A. Fujiwara

    Spin splitting in EuO(111)/Si(111) spin-filter tunnel junctions with atomically sharp interface

    Jpn. J. Appl. Phys. 57 (11), 110304 (2018).

  2. H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono

    Detection of single holes generated by impact ionization in silicon

    Appl. Phys. Lett. 113 (16), 163103 (2018).

  3. T. Hayashi, Y. Tokura, and A. Fujiwara

    Field-dependent hopping conduction

    Physica B 541 19-23 (2018).

  4. R. Sivakumarasamy, R. Hartkamp, B. Siboulet, J. F. Dufreche, K. Nishiguchi, A. Fujiwara, and N. Clement

    Selective layer-free blood serum ionogram based on ion-specific interactions with a nanotransistor

    Nat. Mater. 17 (5) 464-+ (2018).

  5. T. Hayashi, A. Naka, M. Hiroki, T. Yokota, T. Someya, and A. Fujiwara

    Transport characteristics in Au/pentacene/Au diodes

    Jpn. J. Appl. Phys. 57 (3), 03EH07 (2018).

  1. J. Trasobares, J. Rech, T. Jonckheere, T. Martin, O. Aleveque, E. Levillain, V. Diez-Cabanes, Y. Olivier, J. Cornil, J. P. Nys, R. Sivakumarasamy, K. Smaali, P. Leclere, A. Fujiwara, D. Theron, D. Vuillaume, and N. Clement

    Estimation of pi-pi Electronic Couplings from Current Measurements

    Nano Lett. 17 (5) 3215-3224 (2017).

  2. K. Chida, S. Desai, K. Nishiguchi, and A. Fujiwara

    Power generator driven by Maxwell's demon

    Nat. Commun. 8, 15301 (2017).

  3. S. Punniyakoti, R. Sivakumarasamy, F. Vaurette, P. Joseph, K. Nishiguchi, A. Fujiwara, and N. Clement

    Hydrogen Silsesquioxane-Based Nanofluidics

    Adv. Mater. Interfaces 4 (7), 1601155 (2017).

  4. G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara

    High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump

    Sci Rep 7, 45137 (2017).

  5. T. Watanabe, M. Hori, T. Tsuchiya, A. Fujiwara, and Y. Ono

    Time-domain charge pumping on silicon-on-insulator MOS devices

    Jpn. J. Appl. Phys. 56 (1), 011303 (2017).

  6. I. Mahboob, M. Villiers, K. Nishiguchi, D. Hatanaka, A. Fujiwara and H. Yamaguchi

    A correlated electromechanical system

    New J. Phys. 19, 033026 (2017).

  1. I. Mahboob, R. Dupuy, K. Nishiguchi, A. Fujiwara and H. Yamaguchi

    Hopf and period-doubling bifurcations in an electromechanical resonator

    Appl. Phys. Lett. 109 (7), 073101 (2016)

  2. M. Villiers, I. Mahboob, K. Nishiguchi, D. Hatanaka, A. Fujiwara, and H. Yamaguchi

    An electromechanical displacement transducer

    Appl. Phys. Express 9 (8), 086701 (2016).

  3. J. Trasobares, D. Vuillaume, D. Theron and N. Clement

    A 17 GHz molecular rectifier

    Nat. Commun. 7 12850 (2016).

  4. K. Nishiguchi, D. Yoshizumi, Y. Sekine, K. Furukawa, A. Fujiwara and M. Nagase

    Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice

    Appl. Phys. Express 9 (10), 105101 (2016).

  5. G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa and A. Fujiwara

    Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107

    Appl. Phys. Lett. 109 (1), 013101 (2016).

  6. T. Uchida, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, and Y. Takahashi

    Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping

    J. Appl. Phys. 120 (23), 234502 (2016).

  1. M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa and Y. Takahashi

    Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor

    J. Appl. Phys. 118, 214305 (2015).

  2. T. Uchida, M. Jo, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara and Y. Takahashi

    Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

    AIP Adv. 5, 117144 (2015).

  3. K. Chida, K. Nishiguchi, G. Yamahata, H. Tanaka and A. Fujiwara

    Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection

    Appl. Phys. Lett. 107, 073110 (2015).

  4. K. Nishiguchi, A. Castellanos-Gomez, H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant and G. A. Steele

    Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

    Appl. Phys. Lett. 107, 053101 (2015).

  5. P. A. Carles, K. Nishiguchi and A. Fujiwara

    Deviation from the law of energy equipartition in a small dynamic-random-access memory

    Jpn. J. Appl. Phys. 54, 06FG03 (2015).

  6. V. T. Renard, B. A. Piot, X. Waintal, G. Fleury, D. Cooper, Y. Niida, D. Tregurtha, A. Fujiwara, Y. Hirayama and K. Takashina

    Valley polarization assisted spin polarization in two dimensions

    Nat. Commun. 6, 7230 (2015).

  7. M. Hori, M. Uematsu, A. Fujiwara and Y. Ono

    Electrical activation and electron spin resonance measurements of arsenic implanted in silicon

    Appl. Phys. Lett. 106, 142105 (2015).

  8. I. Mahboob, N. Perrissin, K. Nishiguchi, D. Hatanaka, Y. Okazaki, A. Fujiwara and H. Yamaguchi

    Dispersive and Dissipative Coupling in a Micromechanical Resonator Embedded with a Nanomechanical Resonator

    Nano Lett. 15, 2312-2317 (2015).

  9. S. Sasaki, K. Tateno, G. Q. Zhang, H. Pigot, Y. Harada, S. Saito, A. Fujiwara, T. Sogawa and K. Muraki

    Self-aligned gate-all-around InAs/InP core-shell nanowire field-effect transistors

    Jpn. J. Appl. Phys. 54, 04DN04 (2015).

  10. T. Uchida, M. Arita, A. Fujiwara, and Y. Takahashi

    Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots

    J. Appl. Phys. 117 (8), 084316 (2015).

  11. G. Yamahata, T. Karasawa, and A. Fujiwara

    Gigahertz single-hole transfer in Si tunable-barrier pumps

    Appl. Phys. Lett. 106 (2), 023112 (2015).

  1. K. Nishiguchi, Y. Ono and A. Fujiwara

    Single-electron thermal noise

    Nanotechnology 25 (27), 275201 (2014).

  2. J. Noborisaka, K. Nishiguchi and A. Fujiwara

    Electric tuning of direct-indirect optical transitions in silicon

    Sci Rep 4, 6950 (2014).

  3. S. Sakuragi, T. Sakai, S. Urata, S. Aihara, A. Shinto, H. Kageshima, M. Sawada, H. Namatame, M. Taniguchi and T. Sato

    Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

    Phys. Rev. B 90 (5), 054411 (2014).

  4. R. Sivakumarasamy, K. Nishiguchi, A. Fujiwara, D. Vuillaume and N. Clement

    A simple and inexpensive technique for PDMS/silicon chip alignment with sub-mu m precision

    Anal. Methods 6 (1), 97-101 (2014).

  5. G. Yamahata, K. Nishiguchi and A. Fujiwara

    Gigahertz single-trap electron pumps in silicon

    Nat. Commun. 5, 5038 (2014).

  6. G. Yamahata, K. Nishiguchi and A. Fujiwara

    Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles

    Phys. Rev. B 89 (16), 165302 (2014).

  7. I. Mahboob, M. Mounaix, K. Nishiguchi, A. Fujiwara and H. Yamaguchi

    A multimode electromechanical parametric resonator array

    Sci Rep 4, 4448 (2014).

  1. T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, and M. Uematsu

    Diffusion of carbon oxides in SiO2 during SiC oxidation: A first-principles study

    J. Appl. Phys. 113 (18), 184312 (2013).

  2. N. Clement, K. Nishiguchi, JF. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume

    Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors

    Nano Lett. 13 (8), 3903-3908 (2013).

  3. H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase

    Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface

    Phys. Rev. B 88 (23), 235405 (2013).

  4. Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, and Y. Hirayama

    Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

    Appl. Phys. Lett. 102 (19), 191603 (2013).

  5. K. Nishiguchi, H. Yamaguchi, A. Fujiwara, van der HSJ. Zant, and GA. Steele

    Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

    Appl. Phys. Lett. 103 (14), 143102 (2013).

  6. VT. Renard, I. Duchemin, Y. Niida, A. Fujiwara, Y. Hirayama, and K. Takashina

    Metallic behaviour in SOI quantum wells with strong intervalley scattering

    Sci Rep 3, 2011 (2013).

  7. K. Takashina, Y. Niida, VT. Renard, BA. Piot, DSD. Tregurtha, A. Fujiwara, and Y. Hirayama

    Spin and valley polarization dependence of resistivity in two dimensions

    Phys. Rev. B 88 (20), 201301 (2013).

  8. Y. Murata, M. Takamura, H. Kageshima, and H. Hibino

    Self organization of a hexagonal network of quasi-free-standing monolayer graphene nanoribbons

    Phys. Rev. B 87 (16), 165408 (2013).

  9. CM. Orofeo, S. Suzuki, H. Kageshima, and H. Hibino

    Growth and low-energy electron microscopy characterization of monolayer hexagonal boron nitride on epitaxial cobalt

    Nano Res. 6 (5), 335-347 (2013).

  10. I. Mahboob, V. Nier, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi

    Multi-mode parametric coupling in an electromechanical resonator

    Appl. Phys. Lett. 103 (15), (2013).

  11. I. Mahboob, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi

    Phonon Lasing in an Electromechanical Resonator

    Phys. Rev. Lett. 110 (12), 127202 (2013).

  1. S. Aihara, H. Kageshima., T. Sakai, and T. Sato.

    First-principles study of charging effect on magnetism of Pd (100) ultrathin films

    Journal Of Applied Physics 112 (7), 073910 (2012).

  2. S. Horiguchi, and A. Fujiwara

    Fluctuation of average position of electrons in Coulomb island in Si single-electron transistor

    Thin Solid Films 520 (8), 33493353 (2012).

  3. M. Inoue, H. Kageshima, Y. Kangawa, and K. Kakimoto

    First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)

    Physical Review B 86 (8), 085417 (2012).

  4. M. Jo, Y. Kato, M. Arita, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi, and JB. Choi

    Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device

    Ieice Transactions On Electronics E95C (5), 865870 (2012).

  5. H. Kageshima, and A. Fujiwara

    First-principles study of nonclassical effects in silicon-based nanocapacitors

    Physical Review B 85 (20), 205304 (2012).

  6. H. Kageshima, H. Hibino, and S. Tanabe

    The physics of epitaxial graphene on SiC(0001)

    Journal Of Physics-condensed Matter 24 (31), 314215 (2012).

  7. GP. Lansbergen, Y. Ono, and A. Fujiwara

    Donor-Based Single Electron Pumps with Tunable Donor Binding Energy

    Nano Letters 12 (2), 763768 (2012).

  8. K. Nishiguchi, and A. Fujiwara.

    Detecting signals buried in noise via nanowire transistors using stochastic resonance

    Applied Physics Letters 101 (19), 193108 (2012).

  9. K. Nishiguchi, and A. Fujiwara

    Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors with Small Subthreshold Swing Driven by Body-Bias Effect

    Applied Physics Express 5 (8), 085002 (2012).

  10. T. Thorbeck, A. Fujiwara, and NN. Zimmerman

    Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model

    Ieee Transactions On Nanotechnology 11 (5), 975978 (2012).

  11. H. Hibino, S. Tanabe, S. Mizuno, and H. Kageshima

    Growth and electronic transport properties of epitaxial graphene on SiC

    Journal Of Physics D-applied Physics 45 (15), 154008 (2012).

  12. S. Tanabe, Y. Sekine, H. Kageshima, and H. Hibino

    Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)

    Japanese Journal Of Applied Physics 51 (2), 02BN02 (2012).

  13. S. Tanabe, M. Takamura, Y. Harada, H. Kageshima, and H. Hibino

    Quantum Hall effect and carrier scattering in quasi-free-standing monolayer graphene

    Applied Physics Express 5, 125101 (2012).

  14. I. Mahboob, K. Nishiguchi, H. Okamoto, and H. Yamaguchi

    Phonon-cavity electromechanics

    Nature Physics 8 (5), 387392 (2012).

  15. I. Mahboob, Q. Wilmart, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi

    Tuneable electromechanical comb generation

    Applied Physics Letters 100 (11), 113109 (2012).

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