Yoshikazu Homma, Paul Finne, Toshio Ogino,
H. Noda, T. Urisu,
"Aligned island formation using step-band
networks on Si(111)",
J. Appl. Phys. 86, 3083-3088 (1999).
Yoshikazu Homma, Paul Finne and Toshio Ogino,
"Aligned island formation using an array
of step bands and holes on Si(111)",
Appl. Phys. Lett.74, 815-817 (1999).
Yoshikazu Homma and Paul Finne,
"Steps on subliming Si(111) surfaces",
J. Phys. Condensed Matter 11, 9879-9888 (1999).
Yoshihiro Kobayashi, Koji Sumitomo, Kenji
Shiraishi, Tuneo Urisu and Toshio Ogino,
"Control of surface compostion on Ge/Si(001)2X1
surfaces by atomic hydrogen irradiation",
Surf. Sci. 436, 9-14 (1999).
Yoshihiro Kobayashi, Koji Sumitomo and Toshio
Ogino,
"Observation of Ge surface segregation
during Si-MBE on Ge/Si(001) probed by Si-H/Ge-H
surface vibrations",
Surf. Sci. 427-428, 229-234 (1999).
Kuniyil Prabhakaran and Toshio Ogino,
"High temperature reaction of nitric
oxide with Si surfaces: Formation of Si nanopillars
through nitride masking and oxygen etching",
J. Vac. Sci. Technol. 17, 1346-1349 (1999).
Kuniyil Prabhakaran, Koji Sumitono and Toshio
Ogino,
"Interaction of Co with SiGe epilayer
grown on Si(100)",
Surf. Sci. 421, 100-105 (1999).
Kuniyil Prabhakaran, Koji Sumitono and Toshio
Ogino,
"Oxidation of cobalt pre-reacted SiGe
epilayer grown on Si(100)",
Surf. Sci. Lett. 429, 274-278 (1999).
Koji Sumitomo, Yoshihiro Kobayashi, T. Ito
and Toshio Ogino,
"Ge segregation mechanism during Si/Ge
multilayer growth",
Thin Solid Films 357, 76-80 (1999).
Hiroo Omi and Toshio Ogino,
"Self-organization of Ge islands on
high-index Si substrates",
Phys. Rev. B59, 7521-7528 (1999).
Paul Finne and Yoshikazu Homma,
"Maskless Selective Area Molecular Beam
Epitaxy of Semiconductors and Metals using
Atomic Step Networks on Silicon",
J. Cryst. Grownth 201/202, 604-609 (1999).
Paul Finne and Yoshikazu Homma,
"Island growth and surface roughness
scaling of epitaxial GaAs on Si observed
by in situ scanning electron microscopy",
Phys. Rev. B59, 15240-15245 (1999).
Paul Finne and Yoshikazu Homma,
"Dynamics, interactions, and collisions
of atomic steps on Si(111) in sublimation",
Phys. Rev. B82, 2737-2740 (1999).
Tomoaki Kawamura, Hiroki Hibino and Toshio
Ogino,
"Origin of reducing domain boundaries
of Si(111)-7x7 during homoepitaxial growth",
Jpn. J. Appl. Phys. 38, 1530-1533 (1999).
Fumihiko Maeda and Toshio Watanabe,
"Sb desorption from Sb/GaAs(001) and
GaSb(001) analyzed by core-level photoelectron
spectroscopy",
J. Electron Spectro. 101-103, 293-298 (1999).
Fumihiko Maeda and Yoshio Watanabe,
"Sb induced reconstruction on Sb-terminated
GaAs(001)",
Phys. Rev. B60, 10652-10655 (1999).
Satoru Suzuki, Fuminiko Maeda, Yoshio Watanabe
and T.Ohno,
"Work function changes of GaAs surfaces
induced by Se treatment",
Jpn. J. Appl. Phys. 38, 5847-5850 (1999).
T. Kawamura, J-J. Delaunay, H. Takenaka,
and Y. Watanabe,
"Design of a VUV/soft x-ray ellipsometry
system that uses laser produced plasma x-rays",
Inst. Phys. Conf. Ser. No. 159 pp.609-612
(1999).
Y. Watanabe, S. Heun, Th. Schmidt, and K.
C. Prince,
"Preliminary spectromicroscopic measurements
of self-organized InAs nanocrystals by SPELEEM",
Jpn. J. Appl. Phys. 38, Suppl. 38-1 556-559
(1999).
F. Maeda and Y. Watanabe,
"Sb desorption from Sb/GaAs(001) and
GaSb(001) analyzed by core-level phtoelectron
spectroscopy",
Journalof Electron Spectroscopy and Related
Phenomena, 101-103, pp.293-298 (1999).
Y. Homma, H. Hibino, Y. Kunii and T. Ogino,
"Transformation of artificial structures
on silicon surfaces due to evaporation",
Surf. Sci. 20, 859 (1999) (in Japanese),
T. Ogino, H. Hibino and Y. Homma,
"Kinetics and thermodynamics of surface
steps on semiconductors",
Critical Reviews in Solid State and Materials
Sciences 24, 227 (1999).
T. Ogino, H. Hibino, Y. Homma, Y. Kobayashi,
K. Prabhakaran, K. Sumitomo and H. Omi,
"Fabrication and integration of nanostructures
on Si surfaces",
Acc. Chem. Res. 32, 447 (1999).
Y. Homma, H. Hibino and T. Ogino,
"Sublimation of Si(111) surfaces observed
by Ultrahigh vacuum scanning electron microscopy",
Shinku 42, 79 (1999) (in Japanese).
H. Yamaguchi, Y. Homma, K. Kanisawa and Y.
Hirayama,
"Drastic Improvement in Surface Flatness
Properties by Using GaAs(111)A Substrates
in Molecular Beam Epitaxy,
Jpn. J. Appl. Phys. 38, 635-644 1999),
S. Suzuki and T. Shodai,
"Electronic structure and electrochemical
properties of electrode material Li7-xMnN4",
Solid State Ionics 116, pp. 1-9 (1999).
Y.Kobayashi, K. Shiraishi, K. Sumitomo and
T. Ogino,
"Structural change on the surface of
SiGe caused by absorbing and coming off from hydrogen".
Surf. Sci. vol. 20, 696 (1999).
K. Prabhakaran, K. Sumitomo and T. Ogino,
"Interaction of Co with SiGe epilayer
grown on Si(100)",
Surf. Sci. 421 (1999) 100-105.
K. Prabhakaran and T. Ogino,
"Chemical bond manipulation for nanostructure
integration wafer scale",
Bulletin of Materials Sciences 1999 March
issue.
K. Prabhakaran, K. Sumitomo and T. Ogino,
"Nano-interface engineering of Co/Ge/Si
systems: Metal incorporation into Ge quantum
dots and SiO2/Si structures",
Thin Solid Films.
K. Prabhakaran, Y. Maeda, Y. Watanabe and
T. Ogino,
"Thermal decomposition pathway of
germanium
and silicon oxides: Observation of a distinct
difference",
Applied Surf. Sci.
K. Prabhakaran and T. Ogino,
"Control of surface reactions on silicon:
Spatial selectivity and pattern formation",
MRSProc.
K. Prabhakaran and T. Ogino,
"Evolution of nanostructure fabrication
from traditional surfacescience", Proc. of Conference, Hokkaido University,
1999 March.