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（１） |
N. Kobayashi, "Growth of GaN-based materials and their device applications", 2001 The Sino-Japanese Modern Engineering and Technology Symposium, Hsinchu, Taiwan (May, 2001) .
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（２） |
Y. Hirayama, "Spin related phenomena in semiconductor layer and dot structures", CIAR (The Canadian Institute for Advanced Research) Nanoelectronics Program Meeting, Victoria, Canada (June, 2001).
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（３） |
S. Tarucha, K. Ono, D. G. Austing, S. Sasaki, T. Fujisawa, Y. Tokura, and L. P. Kouwwenhoven, "Tunable two-electron spin states in quantum dot structures and applicability for making spin qubits", The 59th Annual Device Research Conference (DRC), Notre Dame, USA (June, 2001).
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（４） |
K. Kanisawa, M. J. Butcher, Y. Tokura, H. Yamaguchi, and Y. Hirayama, "Imaging of wave phenomena at InAs(111)A surfaces using scanning tunneling microscopy", First International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '01 (QNN '01), Tsukuba, Japan (July, 2001).
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（５） |
K. Shiraishi, N. Oyama, K. Okajima, N. Miyagishima, H. Yamaguchi, K. Takeda, T. Ito, and T. Ohno, "First principle and macroscopic studies on semiconductor epitaxial growth", 13th International Conference on Crystal Growth (ICCG13), Kyoto, Japan (July, 2001).
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（６） |
D. G. Austing and S. Tarucha, "Addition energy spectra of practical artificial atom and artificial molecule vertical quantum dot structures", The Nano-Physics & Bio-Electronics Workshop, Dresden, Germany (August, 2001). |
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（７） |
T. Fujisawa, Y. Tokura, D. G. Austing, Y. Hirayama, and S. Tarucha, "Long-lived spin state and spin blockade in a vertical quantum dot", The 12th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-12), Santa Fe, USA (August-September, 2001).
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（８） |
K. Kanisawa, M. J. Butcher, Y. Tokura, H. Yamaguchi, and Y. Hirayama, "Two-dimensional Friedel oscillations and electron confinement to nanostructures at a semiconductor surface", 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan (September, 2001).
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（９） |
H. Yamaguchi, R. Dreyfus, S. Miyashita, and Y. Hirayama, "Application of InAs free-standing membranes for electromechanical systems", 2001 International Conference on Solid State Devices and Materials (SSDM2001), Tokyo, Japan (September, 2001).
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（10） |
T. Matsuoka, "Substrates for epitaxial growth of InGaAlN system and growth on their substrates", Frontier Science Research Conference in Materials Science and Technology Series ; Science and Technology of NITRIDE MATERIALS-2001, La Jolla, USA (November, 2001).
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（11） |
T. Nishida and N. Kobayashi, "Highly efficient AlGaN-based UV-LED and its application to visible light source", SPIE Optoelectronics 2002, San Jose, USA (January, 2002).
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（12） |
T. Fujisawa, "Time-dependent phenomena of charge state and spin state in quantum dots", International Workshop on Quantum Dots for Quantum Computing and Classical Size Effect Circuits (IWQDQC), Kochi, Japan (January, 2002).
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（13） |
Y. Hirayama, K. Hashimoto, K. Muraki, and T. Saku, "Possible control of nuclear spin polarization by two-dimensional electron gas", 2002 RCIQE International Seminar on Quantum Nanostructure and Their Device Applications, Sapporo, Japan (February, 2002).
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（14） |
T. Matsuoka, "Miscibility gap in wurtzite In1-X-YGaXAlYN",
Compound Semiconductor Optoelectronic Materials and Device Workshop, Hsinchu,
Taiwan (March, 2002). |
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（15） |
N. Kobayashi, T. Nishida, T. Akasaka, S. Ando, and H. Saito, "AlGaN UV-LEDs with High Efficiency and InGaN LDs Using Grown Facet Mirrors", 4th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2002), Cordoba, Spain (March, 2002) . |
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（16） |
T. Fujisawa, "Time-dependent phenomena of a quantum dot in the Coulomb blockade regime", The 10th JST International Symposium on Quantum Computing, Tokyo, Japan (March, 2002).
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（17） |
T. Nishida and N. Kobayashi, "Fabrication of AlGaN-based ultraviolet light emitting diodes", International Symposium on Light of 21st Century, Tokyo, Japan (March, 2002).
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