List of Invited Talks at International Conferences (Fiscal 2000) III. Quantum Electron Physics

List of Invited Talks at International Conferences (Fiscal 2000)

III. Quantum Electron Physics

(1) N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida, and N. Kobayashi, "Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field-effect transistors", European Materials Research Society Spring Meeting (E-MRS2000 Spring Meeting), Strasbourg, France (May and June, 2000).

(2) Y. Hirayama, "Carrier interaction in semiconductors: toward quantum computing", International Workshop on Spintronics and Quantum Computing, Tokyo, Japan (September, 2000).

(3) T. Fujisawa, "Energy relaxation processes in quantum dots", The 4th International Conference on High Magnetic Fields in Semiconductors (SemiMag-2000), Matsue, Japan (September, 2000).

(4) K. Kanisawa, M. J. Butcher, H. Yamaguchi, and Y. Hirayama, "Imaging of Friedel oscillations at epitaxially grown InAs(111)A surfaces using scanning tunneling microscopy", 25th International Conference on the Physics and Semiconductors (ICPS25), Osaka, Japan (October, 2000).

(5) D. G. Austing, Y. Tokura, H. Tamura, S. Sasaki, S. Amaha, K. Ono, and S. Tarucha, "Vertical quantum dot artificial molecules", International Workshop on Artificial Atoms and Related Finite Fermion and Boson Systems, Trento, Italy (October, 2000).

(6) T. Matsuoka, "Impact on InGaAlN growth of substrate and polarity effects", Next Generation mm-Wave Solid State Power: Materials, Devices & Systems Workshop, South Padre Island, USA (October, 2000).

(7) T. Fujisawa, "Transient current spectroscopy of quantum dots", International Symposium on Quantum Functional Devices, Kanazawa, Japan (November, 2000).

(8) T. Makimoto, K. Kumakura, and N. Kobayashi, "p-InGaN/GaN heterojunction diodes and their application to heterojunction bipolar transistors", Materials Research Society 2000 Fall Meeting (MRS2000 Fall Meeting), Boston, USA (November and December, 2000).

(9) Y. Hirayama, K. Kanisawa, and T. Fujisawa, "Temporal and spatial characterization of semiconductor quantum dots", 1st International Conference on Experimental Implementation of Quantum Computation (IQC01), Sydney, Australia (January, 2001).

(10) T. Fujisawa, "Time-dependent tunneling spectroscopy of single and double quantum dot in the Coulomb blockade regime", 2001 International Seminar on Advanced Semiconductor Device and Circuits, Sapporo, Japan (January and February, 2001).

(11) M. Kasu and N. Kobayashi, "MOVPE growth and large field emission of heavily Si-doped AlN", 6th Japan-Taiwan seminar of science and technology, Chiba, Japan (February, 2001).

(12) Y. Hirayama, K. Muraki, A. Kawaharazuka, K. Hashimoto, and T. Saku, "Backgated layers and nano structures", Advanced Research Workshop on Semiconductor Nanostructures (ARW2001), Queenstown, Australia (February, 2001).

(13) D. G. Austing, T. Tokura, S. Tarucha, P. Matagne, and J. P. Leburton, "Addition energy spectrum of a quantum dot disk up to third shell", Advanced Research Workshop on Semiconductor Nanostructures (ARW2001), Queenstown, Australia (February, 2001).

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(1)	N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida, and N. Kobayashi, "Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field-effect transistors", European Materials Research Society Spring Meeting (E-MRS2000 Spring Meeting), Strasbourg, France (May and June, 2000).
(2)	Y. Hirayama, "Carrier interaction in semiconductors: toward quantum computing", International Workshop on Spintronics and Quantum Computing, Tokyo, Japan (September, 2000).
(3)	T. Fujisawa, "Energy relaxation processes in quantum dots", The 4th International Conference on High Magnetic Fields in Semiconductors (SemiMag-2000), Matsue, Japan (September, 2000).
(4)	K. Kanisawa, M. J. Butcher, H. Yamaguchi, and Y. Hirayama, "Imaging of Friedel oscillations at epitaxially grown InAs(111)A surfaces using scanning tunneling microscopy", 25th International Conference on the Physics and Semiconductors (ICPS25), Osaka, Japan (October, 2000).
(5)	D. G. Austing, Y. Tokura, H. Tamura, S. Sasaki, S. Amaha, K. Ono, and S. Tarucha, "Vertical quantum dot artificial molecules", International Workshop on Artificial Atoms and Related Finite Fermion and Boson Systems, Trento, Italy (October, 2000).
(6)	T. Matsuoka, "Impact on InGaAlN growth of substrate and polarity effects", Next Generation mm-Wave Solid State Power: Materials, Devices & Systems Workshop, South Padre Island, USA (October, 2000).
(7)	T. Fujisawa, "Transient current spectroscopy of quantum dots", International Symposium on Quantum Functional Devices, Kanazawa, Japan (November, 2000).
(8)	T. Makimoto, K. Kumakura, and N. Kobayashi, "p-InGaN/GaN heterojunction diodes and their application to heterojunction bipolar transistors", Materials Research Society 2000 Fall Meeting (MRS2000 Fall Meeting), Boston, USA (November and December, 2000).
(9)	Y. Hirayama, K. Kanisawa, and T. Fujisawa, "Temporal and spatial characterization of semiconductor quantum dots", 1st International Conference on Experimental Implementation of Quantum Computation (IQC01), Sydney, Australia (January, 2001).
(10)	T. Fujisawa, "Time-dependent tunneling spectroscopy of single and double quantum dot in the Coulomb blockade regime", 2001 International Seminar on Advanced Semiconductor Device and Circuits, Sapporo, Japan (January and February, 2001).
(11)	M. Kasu and N. Kobayashi, "MOVPE growth and large field emission of heavily Si-doped AlN", 6th Japan-Taiwan seminar of science and technology, Chiba, Japan (February, 2001).
(12)	Y. Hirayama, K. Muraki, A. Kawaharazuka, K. Hashimoto, and T. Saku, "Backgated layers and nano structures", Advanced Research Workshop on Semiconductor Nanostructures (ARW2001), Queenstown, Australia (February, 2001).
(13)	D. G. Austing, T. Tokura, S. Tarucha, P. Matagne, and J. P. Leburton, "Addition energy spectrum of a quantum dot disk up to third shell", Advanced Research Workshop on Semiconductor Nanostructures (ARW2001), Queenstown, Australia (February, 2001).