List of Invited Talks at International Conferences (Fiscal 2000) I. Device Physics

List of Invited Talks at International Conferences (Fiscal 2000)

I. Device Physics

(1) H. Hibino and T. Ogino, "Si twinning superlattice: Growth of new single crystal Si", US-Japan seminar on Mesoscopic Phenomena on Surfaces, Park city, USA (April , 2000).

(2) Y. Takahashi, A. Fujiwara, Y. Ono, and K. Murase, "Silicon single-electron devices and their applications", The 30th IEEE International Symposium on Multiple-Valued Logic (ISMVL), Portland, USA (May, 2000).

(3) T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, and Zhaohui Zhang, "Control of atomic structures on Si surfaces for wafer-scale nanointegration", International Symposium on Advanced Science and Technology of Si Materials, Kona, USA (November, 2000).

(4) T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, and Zhaohui Zhang, "Control of Si surface for quantum-dot network devices", 4th International Workshop on Quantum Functional devices (QFD2000), Kanazawa, Japan (November, 2000).

(5) T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, and Zhaohui Zhang, "Bottom-up approach for nanointegration", Nanoarchitectonics using Suprainteraction (NASI1), Tsukuba, Japan (November, 2000).

(6) Y. Watanabe, S. Suzuki, F. Maeda, and T. Kiyokura, "Synchrotoron radiation photoelectron spectroscopy of nanostructures", 1st. International Workshop on Nano-scale Spectroscopy, Trieste, Italy (December, 2000).

(7) T. Ito, K. Shiraishi, and A. Taguchi, "Quantum mechanical approach for understanding the growth process of semiconductors," The 2000 International Chemical Congress of Pacific Basin Societies (Pacifichem2000), Honolulu, USA (December, 2000).

(8) Y. Takahashi, Y. Ono, A. Fujiwara, and K. Murase, "Advanced technologies for Si-based single-electron tunneling devices", International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS2000), Sapporo, Japan (September, 2000).

(9) K. Shiraishi, H. Kageshima, and S. Uematsu, "Microscopic mechanism of Si oxidation", 25th International Conference on the Physics of Semiconductors, Osaka, Japan (September, 2000).

(10) Y. Homma, "Surface imaging by ultrahigh vacuum scanning electron microscopy", 2nd LEEM/PEEM Workshop, Paris, France (September, 2000).

(11) Y. Takahashi, A. Fujiwara, Y. Ono, S. Horiguchi, K. Shiraishi, M. Nagase, K. Murase, "Advanced techniques for silicon single-electron devices", International Conference on Experimental Implementation of Quantum Computation (IQC01), Sydney, Australia (January, 2001).

(12) P. Kuniyil and T. Ogino, "Fabrication of functional nanostructures on silicon through chemical bond manipulation", Science and Technology of Nanostructured Materials, Institute of Physics, Puri, India (January, 2001).

(13) T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, and Zhaohui Zhang, "Si surface design for nanostructure self-assembly", Symposium on Surface Science, 2001 (3S'01), Furano, Japan (January, 2001).

(14) H. Hibino and T. Ogino, "Growth of Si twinning superlattice", Lawrence Symposium on Critical Issues in Expitaxy, Scottsdale, USA (January, 2001).

(15) K. Shiraishi, N. Oyama, K. Okajima, N. Miyagishima, K. Takeda, H. Yamaguchi, T. Ito, and T. Ohno, "Plastic versus elastic strain relaxation in heteroepitaxy of InAs/GaAs(110)", Ringberg Workshop, Rottach-Egern, Germany (February, 2001).

(16) Y. Takahashi, A. Fujiwara, Y. Ono, S. Horiguchi, K. Shiraishi, M. Nagase, and K. Murase, "Silicon single-electron transistor", 2001 March Meeting of the American Physical Society, Seattle, USA (March, 2001).

(17) T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, D. Bottomley, and Zhaohui Zhang, "Self-assembly process for quantum structures on Si wafers", 6th International Symposium on Advanced Physics Field-Growth of Well-Defined Nanostructures (APF-6), Tsukuba, Japan (March, 2001).

(18) H. Hibino and T. Ogino, "Epitaxial growth of Si twinnig superlattice", 6th International Symposium on Advanced Physics Field-Growth of Well-Defined Nanostructures (APF-6), Tsukuba, Japan (March, 2001).

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(1)	H. Hibino and T. Ogino, "Si twinning superlattice: Growth of new single crystal Si", US-Japan seminar on Mesoscopic Phenomena on Surfaces, Park city, USA (April , 2000).
(2)	Y. Takahashi, A. Fujiwara, Y. Ono, and K. Murase, "Silicon single-electron devices and their applications", The 30th IEEE International Symposium on Multiple-Valued Logic (ISMVL), Portland, USA (May, 2000).
(3)	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, and Zhaohui Zhang, "Control of atomic structures on Si surfaces for wafer-scale nanointegration", International Symposium on Advanced Science and Technology of Si Materials, Kona, USA (November, 2000).
(4)	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, and Zhaohui Zhang, "Control of Si surface for quantum-dot network devices", 4th International Workshop on Quantum Functional devices (QFD2000), Kanazawa, Japan (November, 2000).
(5)	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, and Zhaohui Zhang, "Bottom-up approach for nanointegration", Nanoarchitectonics using Suprainteraction (NASI1), Tsukuba, Japan (November, 2000).
(6)	Y. Watanabe, S. Suzuki, F. Maeda, and T. Kiyokura, "Synchrotoron radiation photoelectron spectroscopy of nanostructures", 1st. International Workshop on Nano-scale Spectroscopy, Trieste, Italy (December, 2000).
(7)	T. Ito, K. Shiraishi, and A. Taguchi, "Quantum mechanical approach for understanding the growth process of semiconductors," The 2000 International Chemical Congress of Pacific Basin Societies (Pacifichem2000), Honolulu, USA (December, 2000).
(8)	Y. Takahashi, Y. Ono, A. Fujiwara, and K. Murase, "Advanced technologies for Si-based single-electron tunneling devices", International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS2000), Sapporo, Japan (September, 2000).
(9)	K. Shiraishi, H. Kageshima, and S. Uematsu, "Microscopic mechanism of Si oxidation", 25th International Conference on the Physics of Semiconductors, Osaka, Japan (September, 2000).
(10)	Y. Homma, "Surface imaging by ultrahigh vacuum scanning electron microscopy", 2nd LEEM/PEEM Workshop, Paris, France (September, 2000).
(11)	Y. Takahashi, A. Fujiwara, Y. Ono, S. Horiguchi, K. Shiraishi, M. Nagase, K. Murase, "Advanced techniques for silicon single-electron devices", International Conference on Experimental Implementation of Quantum Computation (IQC01), Sydney, Australia (January, 2001).
(12)	P. Kuniyil and T. Ogino, "Fabrication of functional nanostructures on silicon through chemical bond manipulation", Science and Technology of Nanostructured Materials, Institute of Physics, Puri, India (January, 2001).
(13)	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, H. Omi, D. Bottomley, and Zhaohui Zhang, "Si surface design for nanostructure self-assembly", Symposium on Surface Science, 2001 (3S'01), Furano, Japan (January, 2001).
(14)	H. Hibino and T. Ogino, "Growth of Si twinning superlattice", Lawrence Symposium on Critical Issues in Expitaxy, Scottsdale, USA (January, 2001).
(15)	K. Shiraishi, N. Oyama, K. Okajima, N. Miyagishima, K. Takeda, H. Yamaguchi, T. Ito, and T. Ohno, "Plastic versus elastic strain relaxation in heteroepitaxy of InAs/GaAs(110)", Ringberg Workshop, Rottach-Egern, Germany (February, 2001).
(16)	Y. Takahashi, A. Fujiwara, Y. Ono, S. Horiguchi, K. Shiraishi, M. Nagase, and K. Murase, "Silicon single-electron transistor", 2001 March Meeting of the American Physical Society, Seattle, USA (March, 2001).
(17)	T. Ogino, Y. Homma, Y. Kobayashi, H. Hibino, P. Kuniyil, K. Sumitomo, D. Bottomley, and Zhaohui Zhang, "Self-assembly process for quantum structures on Si wafers", 6th International Symposium on Advanced Physics Field-Growth of Well-Defined Nanostructures (APF-6), Tsukuba, Japan (March, 2001).
(18)	H. Hibino and T. Ogino, "Epitaxial growth of Si twinnig superlattice", 6th International Symposium on Advanced Physics Field-Growth of Well-Defined Nanostructures (APF-6), Tsukuba, Japan (March, 2001).