国際会議招待講演一覧　（2003年度）　III．量子電子物性関連

国際会議招待講演一覧　（2003年度）

III．量子電子物性関連

（１） K. Kanisawa, Y. Tokura, H. Yamaguchi, and Y. Hirayama, “Direct probing of local-density-of-states in semiconductor nanostructures”, Photonics West, San Jose, USA (Jan. 2003).

（２） K. Kanisawa, Y. Tokura, H. Yamaguchi, and Y. Hirayama, “Scanning tunneling spectroscopy study of zero-dimensional structures at the InAs surface”, 30th Conf. on Phys. and Chem. of Semicond. Interfaces (PCSI-30), Salt Lake City, USA (Jan. 2003).

（３） H. Yamaguchi, S. Miyashita, and Y. Hirayama “Fabrication and Characterization of InAs-based Electromechanical Systems”, 2003 RCIQE International Seminar on Quantum Nanoelectronics for Meme-Media-Based Information Technologies, Sapporo, Japan (Feb. 2003).

（４） T. Fujisawa, “Single electron dynamics in quantum dots”, Sweden-Japan Nanotechnology Colloquium, Lund, Sweden (Mar. 2003).

（５） T. Makimoto, K. Kumakura, and N. Kobayashi, “npn-Type Nitride Heterojunction Bipolar Transistors”, 2003 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2003), Busan, Korea (Jun. 2003).

（６） M. Kasu and N. Kobayashi, “Influence of epitaxy on the surface conduction of diamond film”, 2003 European Materials Research Society Spring Meeting (E-MRS2003), Strasbourg, France (Jun. 2003).

（７） Y. Hirayama, “Quantum Hall Effects at Landau Level Crossings”, Int. Symp. on Quantum Hall Effects: Past, Present, and Future, Stuttgart, Germany (Jul. 2003).

（８） T. Fujisawa, “Single electron dynamics in quantum dots”, The 11th International Conference on Modulated Semiconductor Structures (MSS11), Nara, Japan (Jul. 2003).

（９） T. Nishida, T. Ban, and N. Kobayashi, “Nitride UV emitters”, 30th Int. Symp. Compound Semicond. (ISCS2003), San Diego, USA (Aug. 2003).

（10） Y. Hirayama, “Electronic States and Their Control in Semiconductor Quantum Dots”, Trends in Nanotechnology (TNT2003), Salamanca, Spain (Sep. 2003).

（11） T. Matsuoka, H. Takahata, T. Mitate, S. Mizuno, and T. Makimoto, “Polarity of GaN grown on a several substrates by MOVPE”, 8th Wide-Bandgap Ⅲ-Nitride Workshop, Richmond, USA (Sep. 2003).

（12） T. Matsuoka and H. Okamoto, “MOVPE Growth of InN and its Band-Gap Energy”, 8th Wide-Bandgap Ⅲ-Nitride Workshop, Richmond, USA (Sep. 2003).

（13） T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, and T. Makimoto: “MOVPE Growth of Wurtzite InN and its Optical Characteristics”, 2003 Int. Conf. on Solid State Devices and Materials (SSDM2003), Tokyo, Japan (Sep. 2003).

（14） H. Yamaguchi, K. Kanisawa, S. Miyashita, and Y. Hirayama, “InAs/GaAs(111)A Heteroepitaxial System”, 5th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS2003), Stuttgart, Germany (Oct. 2003).

（15） T. Fujisawa, “Coherent charge oscillations in a semiconductor double quantum dot”, Int. Workshop on Correlation, Decoherence and Spin Effects in Simple and Complex Quantum Dot Systems, Bad Honnef, Germany (Oct. 2003).

（16） T. Nishida, “GaN-free Transparent Structure for Ultraviolet Light Emitting Diodes”, Phys. of Light-Matter Coupling in Nanostructures (PLMCN3), Sicily, Italy (Oct. 2003).

（17） Y. Hirayama and T. Fujisawa, “Carrier Dynamics and Coherent Oscillation in Quantum Dots”, 6th Int. Conf. New Phenomena in Mesoscopic Structures and The 4th Int. Conf. Surface and Interfaces in Mesoscopic Devices (NPMS-6/SIMD-4), Hawaii (Nov. 2003).

（18） T. Matsuoka, H. Okamoto, M. Nakao, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, H. Harima, and T. Makimoto, “MOVPE Growth of Wurtzite InN and Experimental Consideration of its Optical Characteristics”, ONR Indium Nitride Workshop (ONR), Fremantle, Australia (Nov. 2003).

（19） T. Fujisawa, “Dynamics of single-electron charge and spin in semiconductor quantum dots”, Int. Conf. Quantum Information (ICQI), Kyoto, Japan (Dec. 2003).

（20） T. Fujisawa, “Dynamics of single electron charge and spin in semiconductor quantum dots” Solid State Quantum Information Processing Conference, Amsterdam, The Netherland (Dec. 2003).

【前ページ】　【目次へもどる】　【次ページ】

（１）	K. Kanisawa, Y. Tokura, H. Yamaguchi, and Y. Hirayama, “Direct probing of local-density-of-states in semiconductor nanostructures”, Photonics West, San Jose, USA (Jan. 2003).
（２）	K. Kanisawa, Y. Tokura, H. Yamaguchi, and Y. Hirayama, “Scanning tunneling spectroscopy study of zero-dimensional structures at the InAs surface”, 30th Conf. on Phys. and Chem. of Semicond. Interfaces (PCSI-30), Salt Lake City, USA (Jan. 2003).
（３）	H. Yamaguchi, S. Miyashita, and Y. Hirayama “Fabrication and Characterization of InAs-based Electromechanical Systems”, 2003 RCIQE International Seminar on Quantum Nanoelectronics for Meme-Media-Based Information Technologies, Sapporo, Japan (Feb. 2003).
（４）	T. Fujisawa, “Single electron dynamics in quantum dots”, Sweden-Japan Nanotechnology Colloquium, Lund, Sweden (Mar. 2003).
（５）	T. Makimoto, K. Kumakura, and N. Kobayashi, “npn-Type Nitride Heterojunction Bipolar Transistors”, 2003 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2003), Busan, Korea (Jun. 2003).
（６）	M. Kasu and N. Kobayashi, “Influence of epitaxy on the surface conduction of diamond film”, 2003 European Materials Research Society Spring Meeting (E-MRS2003), Strasbourg, France (Jun. 2003).
（７）	Y. Hirayama, “Quantum Hall Effects at Landau Level Crossings”, Int. Symp. on Quantum Hall Effects: Past, Present, and Future, Stuttgart, Germany (Jul. 2003).
（８）	T. Fujisawa, “Single electron dynamics in quantum dots”, The 11th International Conference on Modulated Semiconductor Structures (MSS11), Nara, Japan (Jul. 2003).
（９）	T. Nishida, T. Ban, and N. Kobayashi, “Nitride UV emitters”, 30th Int. Symp. Compound Semicond. (ISCS2003), San Diego, USA (Aug. 2003).
（10）	Y. Hirayama, “Electronic States and Their Control in Semiconductor Quantum Dots”, Trends in Nanotechnology (TNT2003), Salamanca, Spain (Sep. 2003).
（11）	T. Matsuoka, H. Takahata, T. Mitate, S. Mizuno, and T. Makimoto, “Polarity of GaN grown on a several substrates by MOVPE”, 8th Wide-Bandgap Ⅲ-Nitride Workshop, Richmond, USA (Sep. 2003).
（12）	T. Matsuoka and H. Okamoto, “MOVPE Growth of InN and its Band-Gap Energy”, 8th Wide-Bandgap Ⅲ-Nitride Workshop, Richmond, USA (Sep. 2003).
（13）	T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, and T. Makimoto: “MOVPE Growth of Wurtzite InN and its Optical Characteristics”, 2003 Int. Conf. on Solid State Devices and Materials (SSDM2003), Tokyo, Japan (Sep. 2003).
（14）	H. Yamaguchi, K. Kanisawa, S. Miyashita, and Y. Hirayama, “InAs/GaAs(111)A Heteroepitaxial System”, 5th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS2003), Stuttgart, Germany (Oct. 2003).
（15）	T. Fujisawa, “Coherent charge oscillations in a semiconductor double quantum dot”, Int. Workshop on Correlation, Decoherence and Spin Effects in Simple and Complex Quantum Dot Systems, Bad Honnef, Germany (Oct. 2003).
（16）	T. Nishida, “GaN-free Transparent Structure for Ultraviolet Light Emitting Diodes”, Phys. of Light-Matter Coupling in Nanostructures (PLMCN3), Sicily, Italy (Oct. 2003).
（17）	Y. Hirayama and T. Fujisawa, “Carrier Dynamics and Coherent Oscillation in Quantum Dots”, 6th Int. Conf. New Phenomena in Mesoscopic Structures and The 4th Int. Conf. Surface and Interfaces in Mesoscopic Devices (NPMS-6/SIMD-4), Hawaii (Nov. 2003).
（18）	T. Matsuoka, H. Okamoto, M. Nakao, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama, H. Harima, and T. Makimoto, “MOVPE Growth of Wurtzite InN and Experimental Consideration of its Optical Characteristics”, ONR Indium Nitride Workshop (ONR), Fremantle, Australia (Nov. 2003).
（19）	T. Fujisawa, “Dynamics of single-electron charge and spin in semiconductor quantum dots”, Int. Conf. Quantum Information (ICQI), Kyoto, Japan (Dec. 2003).
（20）	T. Fujisawa, “Dynamics of single electron charge and spin in semiconductor quantum dots” Solid State Quantum Information Processing Conference, Amsterdam, The Netherland (Dec. 2003).