Welcome to Yoshitaka Taniyasu's Homepage　　

Biography

1996 Bachelor degree from the division of Electrical and Electronic Engineering, Chiba University, Japan
1998 Master degree from the division of Electronic and Mechanical Engineering, Chiba University, Japan
2001 Ph.D in Engineering from Chiba University (Doctor thesis: In-situ monitoring of MOVPE growth of III-nitride semiconductors by spectroscopic ellipsometry)
2001-2003 Research associate, NTT Basic research laboratories, Japan
2003- NTT Basic research laboratories
2010- Distinguished Technical Member of NTT Basic Research Laboratories
2011-2012 Visiting Researcher at Ecole polytechnique fédérale de Lausanne (EPFL), Switzerland

News

Ø         “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices” published in Appl. Phys. Lett. 99, 251112 (2011).

 


Ø         Young Scientist Award, The International Symposium on Compound Semiconductors 2011

Ø         Young Scientists’ Prize, The Minister of Education, Culture, Sports, Science and Technology (MEXT), Japan in 2011

 

Research Interests

III-V Nitride Semiconductors and Devices
1. AlN-based ultra-violet light-emitting devices

2. MOVPE growth technologies

3. Physical properties of AlN-based materials

 

Selected Publications

AlN-based ultra-violet light-emitting diodes (UV-LEDs)

·           Y. Taniyasu and M. Kasu, “Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices”, Appl. Phys. Lett. 99, 251112 (2011).

·           Y. Taniyasu and M. Kasu, “Origin of exciton emissions from an AlN p-n junction light-emitting diode”, Appl. Phys. Lett. 98, 131910 (2011).

·           Y. Taniyasu and M. Kasu, “Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation”, Appl. Phys. Lett. 96, 221110 (2010).

·           Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres”, Nature 441, 325-328 (2006).

 

Emission properties

·           R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu and M. Kasu, “Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering”, Appl. Phys. Lett.  95, 031903 (2009).

·           Y. Taniyasu, M. Kasu, and T. Makimoto, "Radiation and polarization properties of free-exciton emission from AlN (0001) surface”, Appl. Phys. Lett. 90, 261911 (2007).

·           G. M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y. Taniyasu, M. Kasu, and T. Makimoto, “Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate”, J. Appl. Phys. 101, 023511 (2007).

 

Doping mechanisms and carrier transport properties

·           Y. Taniyasu, M. Kasu, and T. Makimoto, “Increased electron mobility in n-type Si-doped AlN by reducing dislocation density”, Appl. Phys. Lett. 89, 182112 (2006).

·           Y. Taniyasu, M. Kasu, and T. Makimoto, “Electrical conduction properties of n-type Si-doped AlN with high electron mobility (> 100cm2V-1S-1)”, Appl. Phys. Lett. 85, 4672 (2004).

·           Y. Taniyasu, M. Kasu, K. Kumakura, T. Makimoto, and N. Kobayashi, “High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%”, phys. stat. sol. (a) 200, 40 (2003).

·           Y. Taniyasu, M. Kasu, and N. Kobayashi, “Intentional control of n-type conduction for Si-doped AlN and AlXGa1-XN (0.42 < x < 1)”, Appl. Phys. Lett. 81, 1255 (2002).

 

AlN-based cold cathode materials and it applications

·          Y. Taniyasu, M.Kasu, and T. Makimoto, “Field emission properties of heavily Si-doped AlN in triode-type display structure”, Appl. Phys. Lett. 84, 2115 (2004).

·          Y. Taniyasu, M. Kasu, and N. Kobayashi, “Lattice parameters of wurtzite Al1-XSiXN ternary alloys”, Appl. Phys. Lett. 79, 4351 (2001).

MOVPE growth mechanisms

·           Y. Taniyasu, M. Kasu, and T. Makimoto, "Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate", Journal of Crystal Growth 298, 315 (2007).

·           Y. Taniyasu and A. Yoshikawa, “In-situ Monitoring of Surface Stoichiometry and Growth Kinetics Study of GaN (0001) in MOVPE by Spectroscopic Ellipsometry”, J. Elect. Mater. 30, 1402 (2001).

 

Nitride / Diamond heterostructure

·           K. Hirama, M. Kasu, and Y. Taniyasu, "RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond ", IEEE Electron Device Letters 33,513 (2012).

·           K. Hirama, Y. Taniyasu, and M. Kasu, “AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxys”, Appl. Phys. Lett. 98, 162112 (2011).

·           K. Hirama, Y. Taniyasu, and M. Kasu, “Electroluminescence and capacitance-voltage characteristics of single crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes”, Appl. Phys. Lett. 98, 011908 (2011).

·           K. Hirama, Y. Taniyasu, and M. Kasu, “Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface”, J. Appl. Phys. 108, 013528 (2010).

·           Y. Taniyasu and M. Kasu, "MOVPE growth of single-crystal hexagonal AlN on cubic diamond", Journal of Crystal Growth 311, 2825-2830 (2009).

 

Polytype control: Cubic InGaN LED

·           Y. Taniyasu, K. Suzuki, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, and K. Takahashi, “Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPE”, phys. stat. sol. (a) 180, 241 (2000)

Awards

u       Young Scientist Award

 “Seminal Contributions to the Growth of AlN and its Application to the Shortest Wavelength Light Emitting Diodes”

The International Symposium on Compound Semiconductors 2011

 

u       Young Scientists’ Prize

The Minister of Education, Culture, Sports, Science and Technology (MEXT), Japan in 2011

 

u       Young Scientist Award

 “For outstanding contributions in developing and implementing Aluminum Nitride deep-ultraviolet light-emitting diodes”

14th Semiconducting and Insulating Materials Conferences (SIMC XIV)

 

u       Young Scientist Award for the Presentation of an Excellent Paper at Japan Society of Applied Physics (JSAP) meeting

Japan Society of Applied Physics (JSAP)

Research Funding

Grant-in-Aid for Young Scientists (A) from MEXT (The Ministry of Education, Culture, Sports, Science and Technology), Japan

Period: Apr. 2007 - Mar. 2010 (3 years)

Conference committee

Ø         International Workshop on Nitride Semiconductors (IWN2006, 2012) Program committee member

Ø         Second International Symposium on Growth of III-Nitrides (ISGN-2) Program committee member

Ø         Conference on Lasers and Electro-Optics (CLEO 2009, 2010, 2011, 2012, 2013) Program committee member

Ø         The Pacific Rim Conference on Laser and Electro-Optics 2013 (CLEO-PR) Program committee member

NTT Basic Research Laboratories
3-1 Morinosato Wakamiya, Atsugi-shi,
Kanagawa, 243-0198 JAPAN
Last modified:2012.6.11