藤原聡のホームページ

藤原　聡（ふじわら　あきら）　博士（工）

Updated on October 1, 2020　 English version is here.

NTT 物性科学基礎研究所のホームページへ

略歴

1967年　東京生まれ
1989年　東京大学物理工学科卒業
1991年　同大学院工学系研究科（物理工学）修士課程修了
1994年　同大学院工学系研究科（物理工学）博士課程修了（半導体量子井戸における共鳴電子捕獲に関する研究）
1994年　NTT入社　 LSI研究所勤務
1996年　基礎研究所勤務　
1999年　物性科学基礎研究所勤務
2003-2004年　米国National Institute of Standards and Technology (NIST, Gaithersburg）客員研究員
2006-2020年　ナノデバイス研究グループ　グループリーダ
2007-2015年　物性科学基礎研究所　特別研究員
2011-1014年　最先端・次世代研究開発支援プログラム（NEXT）　研究代表者
　　　　　　　　「単電子・少数電荷制御によるシリコン低消費電力ナノデバイス」
2012-2020年　量子電子物性研究部長　（ナノデバイス研究ループ　グループリーダ兼務）
2015年４月より　NTT上席特別研究員
2018年-2022年　科研費基盤Ｓ　研究代表者　「単電子制御による量子標準・極限計測技術の開発」
応用物理学会会員(2010-2011応用物理学会理事)、IEEEフェロー（2018.1.1より）、応用物理学会フェロー（2020.9.8より）

受賞暦

1996年　第１回応用物理学会講演奨励賞受賞
1998年　SSDM98 Young Researcher Award受賞
1999年　SSDM99 Paper Award 受賞　
2003年　応用物理学会JJAP論文賞受賞　
2006年　応用物理学会JJAP論文賞受賞
2006年　文部科学大臣表彰若手科学者賞受賞　　
「半導体分野におけるナノ構造の物性制御とデバイス応用の研究」
2013年　応用物理学会JJAP論文賞受賞　
2017年　文部科学大臣表彰科学技術賞（研究部門）
「ナノ構造における電子の極限操作とデバイス応用の研究」
2018年　IEEEフェロー（2018.1.1より）
2020年　応用物理学会シリコンテクノロジー分科会論文賞（共著）
2020年　応用物理学会フェロー（2020.9.8より）

学会・委員会等活動

2008年　　　IEEE Nanotechnology Materials and Devices (NMDC) 2008 プログラム委員幹事
2008年～半導体技術ロードマップ専門委員会(STRJ) Emerging Research Device(ERD)-WG　特別委員
2009年～　電気学会　調査専門委員会委員
2010年～2012年　応用物理学会　理事　（総務担当理事）
2011年～　応用物理学会　シリコンテクノロジー研究会　シリコンナノテクノロジー委員会幹事
2012 年 Co-chair of Workshop on Innovative Devices and Systems (WINDS) Dec. 2-7 2012, Hawaii, USA
2012年 NEDDプロジェクト研究評価委員会・分科会委員（事後評価）
2013年プログラム副委員長APPC12（the 12th Asia Pacific Physics Conference） July 2013, Makuhari, Japan
2013-2014 プログラム副委員長SSDM2013 & 2014 (Int. Conf. on Solid State Devices and Materials )
2013年 Co-chair of International Symposium on Nanoscale Transport and Technology (ISNTT2013), Nov. 2013, Atsugi, Japan
2013年 JST戦略的創造研究推進事業追跡評価委員 (2件)
2015年　　　Co-chair of International Symposium on Nanoscale Transport and Technology (ISNTT2015), Nov. 2015, Atsugi, Japan
2015年　　　Co-chair of Silicon Quantum Electronics Workshop, Takamatsu, Aug. 3-4, 2015.
2015年　　　JST戦略的創造研究推進事業ICORP「「樽茶量子スピン情報プロジェクト」」追跡評価委員（2015.9-2016.3）
2015年　　　NEDO技術委員:「低炭素社会を実現する超低電圧デバイスプロジェクト」の事後評価委員(2015.9-2017.3)
2016年　　　JST戦略的創造研究推進事業ERATO選考パネルメンバー（2016,1-2017.3）
2016年　　　JST戦略的創造研究推進事業さきがけ「量子の状態制御と機能化」アドバイザ（2016.5-）
2017年　　　プログラム委員The 20th International Conference on Electron Dynamics in Semicondutors,Optoelectronics and Nanostructures(EDISON 20)
2017年　　　JST未来社会創造事業＜量子慣性センサー＞研究開発運営会議委員 (2017.7-)
2017年　　　日本学術会議　連携会員（2017.10-2023.9）

客員教員・非常勤講師等活動

2007年　非常勤講師(東京大学　物理工学特別講義)
2014, 2011, 2008年　東京工業大学博士論文外部審査委員
2013年　北海道大学客員教授
2016, 2012, 2019年　University of New South Wales 博士論文外部審査委員

CV （Curriculum Vitae　含む全論文リスト等） (as of 2020.10.1)

http://www.researcherid.com/rid/A-6648-2012　(as of 2018.6.15)

Total: 171 papers, Average Citations 19 h-index 32

First author: 17 paper, Average Citations 32.94 h-index 11

Google Scholor Citations　(Automaticlly updated)

最近の主な発表論文・国際会議発表 (updated on 2020.10.1)

Single-electron transfer and dynamics, Tunable-barrier single-electron transistor and double quantum dots, Single-dopant device

[1] S. P. Giblin, E. Mykkänen, A. Kemppinen, P. Immonen, A. J. Manninen, M. Jenei, M. Möttönen, G. Yamahata, A. Fujiwara and M. Kataoka, Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility, Metrologia doi.org/10.1088/1681-7575/ab72e0 (2020).

[2] (Published in Nature Nanotech. !)G. Yamahata, S. Ryu, N. Johnson, H-S. Sim, A. Fujiwara, and M. Kataoka, Picosecond coherent electron motion in a silicon single-electron source, Nature Nanotechnology 14, 1019–1023 (2019).

[3] N. Johnson, G. Yamahata, and A. Fujiwara, Measurement of the curvature and height of the potential barrier for a dynamic quantum dot, Appl. Phys. Lett. 115, 162103 (2019).

[4] S. Giblin, A. Fujiwara, G. Yamahata, M. H. Bae, N. Kim, A. Rossi, M. Möttönen, and M. Kataoka, Evidence for universality of tunable-barrier electron pumps, Metrologia 56, 044004 (2019).

[5] G. Yamahata, S. P. Giblin, M. Kataoka, and T. Karasawa, and A. Fujiwara, High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump, Scientific Reports 7, 45137 (2017).

[6] G. Yamahata, S. P. Giblin, M. Kataoka, T. Karasawa, and A. Fujiwara, Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 10⁷, Appl. Phys. Lett. 109, 013101 (2016).
( See http://www.npl.co.uk/news/record-speed-and-accuracy-achieved-with-single-electron-pumps )

[7] G. Yamahata, T. Karasawa, and A. Fujiwara, Gigahertz single-hole transfer in Si tunable-barrier pumps, Appl. Phys. Lett. 106, 023112 (2015).

[8] G. Yamahata, K. Nishiguchi, and A. Fujiwara, Gigahertz single-trap electron pumps in silicon, Nat. Commun. 5, 5038 (2014).

[9] G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles Phys. Rev. B 89, 165302 (2014).

[10] G. Lansbergen, Y. Ono and A. Fujiwara: Donor based single electron pumps with tunable donor binding energy, Nano Lett. 12 763−768 (2012).

[11] G. Yamahata, K. Nishiguchi, and A. Fujiwara: Accuracy evaluation of single-electron huttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 222104 (2011).

[12] S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara: Resonant escape over an oscillating barrier in a single-electron ratchet transfer, Phys. Rev. B 82, 033303 (2010).

[13] S. Miyamoto, K. Nishiguchi, Y. Ono, K M. Itoh, and A. Fujiwara: Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett. 93, 222103 (2008).

[14] A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: Appl. Phys. Lett. 92, 042102 (2008).

[15] H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama: Pauli-spin-blockade transport through a silicon double quantum dot, Phy. Rev. B 77, 073310 (2008).

[16] M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara: Identification of single and coupled acceptors in silicon nano-field-effect transistors, Applied Physics Letters 91, 263513 (2007).

[17] A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Appl. Phys. Lett. 88 053121 (2006).

[18] A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Appl. Phys. Lett. 84, 1323-1325 (2004).

[19] A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

Single-electron detection and counting statistics / stochastic resonance

[1] (Published in Nature Com. !) K Chida, S. Desai, K Nishiguchi, and A Fujiwara: Power generator driven by Maxwell's demon, Nat. Commun. 8, 15310 (2017).

[2] K Chida, K Nishiguchi, G Yamahata, H Tanaka, A Fujiwara: Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection, Appl. Phys. Lett. 107, 073110, 2015 (2015).

[3] P. A. Carles, K Nishiguchi, and A Fujiwara: Deviation from the law of energy equipartition in a small dynamic-random-access memory, Jpn. J. Appl. Phys. 54, 06FG03 (2015).

[4] K. Nishiguchi, Y. Ono, and A. Fujiwara: Single-electron thermal noise, Nanotechnology 25, 275201 (2014).

[5] K. Nishiguchi, H. Yamaguchi, A. Fujiwara, H. S. J. van der Zant, and G. A. Steele, Wide-bandwidth charge sensitivity with a radio-frequency field-effect Transistor, Appl. Phys. Lett. 103, 143102 (2013).

[6] K. Nishiguchi and A. Fujiwara: Detecting signals buried in noise via nanowire transistors using stochastic resonance, Appl. Phys. Lett. 101, 193108 (2012).

[7] K. Nishiguchi and A. Fujiwara: Single-Electron Stochastic Resonance Using Si Nanowire Transistors, Jpn. J. Appl. Phys. 50, 06GF04 (2011)..

[8] K. Nishiguchi, N. Clement, T. Yamaguchi, and A. Fujiwara: Si nanowire ion-sensitive field-effect transistors with a shared floating gate, APPLIED PHYSICS LETTERS 94, 163106 (2009).

[9] K. Nishiguchi and A. Fujiwara: Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature, Nanotechnology 20 175201 (2009).

Functional nanotransistors, sensors, molecular electronics

[1] (Published in Nature Com !) H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, and Y. Ono, Electron aspirator using electron–electron scattering in nanoscale silicon, Nature Communications 9, 4813 (2018)

[2] (Published in Nature Materials !) R. Sivakumarasamy, R. Hartkamp, B. Siboulet, J.-F. Dufreche, K. Nishiguchi, A. Fujiwara, and N. Clément, Selective-layer-free Blood Serum Ionogram based on Ion-specific Interactions with a Nanotransistor, Nature Materials 17 464 (2018).

[3] N. Clement and A. Fujiwara, Molecular diodes: Breaking the Landauer limit, Nat. Nanotech. 12, 725 (2017).

[4] N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, Water Electrolysis and Energy Harvesting with Zero-Dimensional Ion-Sensitive Field-Effect Transistors, Nano Lett. 13, 3903−3908 (2013).

[5] I. Mahboob, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi, Phonon Lasing in an Electromechanical Resonator , Phys. Rev. Lett. 110 127202 (2013).]

[6] N. Clément, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, and D. Vuillaume, A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity, Appl. Phys. Lett. 98, 014104 (2011).

[7] I. Mahboob, E. Flurin, K. Nishiguchi, A. Fujiwara, and H. Yamaguchi: Nature Communications 2, 198 doi:10.1038/ncomms1201 (2011).

[8] N. Clément, K. Nishiguchi, A. Fujiwara and D. Vuillaume: One-by-one trap activation in silicon nanowire transistors, Nature Communications 1 DOI:10.1038/ncomms1092 (2010).

Silicon quantum well and optical properties

[1] J. Noborisaka, K. Nishiguchi, A. Fujiwara: Electric tuning of direct-indirect optical transitions in silicon, Scientific Reports 4, 6950 (2014).

[2] J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A Fujiwara: Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 98, 033503 (2011).

[3] J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, and A Fujiwara: Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors, Appl. Phys. Lett. 96, 112102 (2010).

Physics of Si 2DEG and valley physics in collaboration with Prof. Hirayama (Tohoku Univ. ) and Dr. Takashina (Univ. of Bath) , Dr. Vincent Renard (CEA)

[1] V. T. Renard, B. A. Piot, X. Waintal, G. Fleury, D. Cooper, Y. Niida, D. Tregurtha, A. Fujiwara, Y. Hirayama and K. Takashina, Valley polarization assisted spin polarization in two dimensions, Nat. Commun. 6, 7230 (2015).

[2] V. T. Renard, I. Duchemin, Y. Niida, A. Fujiwara, Y. Hirayama and K. Takashina, Metallic behaviour in SOI quantum wells with strong intervalley scattering, Scientific reports | 3 : 2011 | DOI: 10.1038/srep02011 (2013).

[3] K. Takashina, Y. Niida, V. T. Renard, B. A. Piot, D. S. D. Tregurtha, A. Fujiwara, and Y. Hirayama, Phys. Rev. B 88, 201301(R) (2013).

[4] Y. Niida, K. Takashina, Y. Ono, A. Fujiwara and Y. Hiryama: Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting, Appl. Phys. Lett. 102, 191603 (2013).

[5] K. Takashina, Y. Niida, V. T. Renard, A. Fujiwara, T. Fujisawa, K. Muraki, and Y.Hirayama: Impact of Valley Polarization on the Resistivity in Two Dimensions, Phys. Rev. Lett. 106, 196403 (2011).

[6] K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, and K. Muraki: Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures, APPLIED PHYSICS LETTERS 94, 142104 (2009).

[7] Y. Niida, K. Takashina, A. Fujiwara, T. Fujisawa, and Y. Hirayama: Spin splitting of upper electron subbands in a SiO2/Si(100)/SiO2 quantum well with in-plane magnetic field, APPLIED PHYSICS LETTERS 94, 142101 (2009).

招待講演（筆頭）

[1] A. Fujiwara, G. Yamahata, N. Johnson, S. Ryu, H-S. Sim, and M. Kataoka, Fast electron dynamics in a silicon dynamic quantum dot, Int. Workshop on Cool Electrons in Flatlands (CEF2020) (June 15-24, 2020, Catania, Italy, held as virtual workshop)

[2] A. Fujiwara, Silicon nanodevices for metrology and sensor applications, IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC2019) (Oct.. 27-30, 2019, Stockholm, Sweden)

[3] A. Fujiwara, Ultimate electronics with silicon nanowire MOSFETs, Workshop on Innovative Nanoscale Devices and Systems (WINDS) (Nov. 25-30, 2018, Hawaii, USA)

[4] A. Fujiwara, G. Yamahata, K. Chida, and K. Nishiguchi, Tunable-barrier electron pump for quantum current standards and information-to-energy converters China-Japan International Workshop on Quantum Technologies, QTech2018 (Aug 23-24, 2018, Hefei, China).

[5] A. Fujiwara, Ultimate electronics with control of single electrons, 7th Summer School on Semiconductor/Superconducting Quantum Coherence Effect and Quantum Information (August 27-29, 2017, Shuzenji, Japan).

[6] A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate electronics with control of single electrons, EM-NANO2017 (June 18-21, 2017, Fukui, Japan).

[7] A. Fujiwara, K. Nishiguchi, G. Yamahata, and K. Chida, Ultimate Single Electronics with Silicon Nanowire MOSFETs, 2017 Silicon Nanoelectronics Workshop (June 4-5, 2017, Kyoto, Japan).

[8] A. Fujiwara, G. Yamahata, K. Nishiguchi, S. P. Giblin, and M. Kataoka, Gigahertz single-electron pump for quantum current standard, 33rd ICPS (Beijing, 31 July- 5 August, 2016)

[9] A. Fujiwara, G. Yamahata, and K. Nishiguchi, Gigahertz Single-Electron Pump towards a Representation of the New Ampere, 2015 SSDM (Sapporo, 27-30 September, 2015).

[10] A. Fujiwara, G. Yamahata, J. Noborisaka, and K. Nishiguchi, Nanoscale Silicon MOSFET for Metrology and Valleytronics Applications, 2015 UK-Japan Silicon Nanoelectronics and Nanotechnology Symposium (Southampton, 9-10 July, 2015).

[11] (Plenary talk) A. Fujiwara, Silicon single-electron devices for ultimate electronics, EURAMET DC & Quantum Metrology Meeting (Bern, 27-29 May 2015)

[12] A. Fujiwara, K. Nishiguchi, G. Yamahata, Silicon nanowire MOSFETs for diverse applications, The 6th IEEE International Nanoelectronics Conference 2014 (INEC2014) (Sapporo, July 28-31, 2014)

[13] (Plenary talk) A. Fujiwara, Silicon-based nanodevices for diverse applications, 39th Int. Conf. on Micro and Nano Engineering (MNE) (London, UK, Sept. 16-19 2013).

[14] A. Fujiwara, G. Yamahata, K. Nishiguchi, G. P. Lansbergen and Y. Ono: Silicon Single-Electron Transfer Devices: Ultimate Control of Electric Charge, 2012 Silicon Nanoelectronics Workshop (June 2012, Hawaii, USA).

[15] A. Fujiwara, K. Nishiguchi, and Y. Ono: Single electron transfer technology using Si nanowire MOSFETs, 2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for ‘More-than-MooreE& ‘Beyond CMOSEEra (March 1 E 2, 2010, Southampton, UK), Program and Abstracts, pp. 19 E20.)

[16] A. Fujiwara, K. Nishiguchi and Y. Ono: Single-electron devices based on silicon nanowire MOSFETs, Trends in Nanotechnology (TNT2009) p.39 (September 7-11, 2009,Barcelona)

[17] A. Fujiwara, K. Nishiguchi and Y. Ono: Silicon Nanowire MOSFETs and Their Application to Single-Electron Devices, International Conference on Nanoscience and Technology (ChinaNANO) 2009, p. 50-51 (September 1-3, 2009,Beijing)

[18] A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, and Y. Takahashi: Silicon Single-Electron Devices and Their Applications, 2008 Tera-level NanoDevices (TND) Technical Forum (Soul, 2008.10.17).

[19] A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, 2nd International Conference on Semiconductor Quantum Dots (QD2002) (2002.9).

[20] A. Fujiwara and Y. Takahashi: Si nano-devices using an electron-hole system, Proceedings of 5th Europian Workshop on Low Temperature Electronics, (Journal de Physiqye IV, 12, No.Pr3), Ed. F Balestra, (WOLTE-5) pp. Pr3-85-Pr3-92 (2002.6).

[21] A. Fujiwara, K. Yamazaki, and Y. Takahashi: Silicon Single-electron CCD, 2001 Int. Micreprocess and Nanotechnology Conference (MNC) pp. 278-279 (2001.10).

[22] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase Single-electron devices: recent attempts towards high performance and functionality, 1999 Int. Conf. Solid State Devices and Materials (SSDM) pp. 248-249 (1999).

[23] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), Sweden-Japan Joint QNANO Workshop (1998).

[24] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Silicon single-electron devices fabricated by pattern-dependent oxidation (PADOX), International Symposium on Formation, Physics and Device Application of Quantum Dot Structures (QDS98), (1998).

筆頭論文（抜粋）

[1] A. Fujiwara, K. Nishiguchi, and Y. Ono: Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor: Applied Physics Letters 92, 042102 (2008).

[2] A. Fujiwara, H. Inokawa, K. Yamazaki, H. Namatsu, Y. Takahashi, N. M. Zimmerman, and S. B. Martin: Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor, Applied Physics Letters 88 053121 (2006).

[3] A. Fujiwara, N. M. Zimmerman, Y. Ono, and Y. Takahashi: Current quantization due to single-electron transfer in Si-wire charge-coupled devices, Applied Physics Letters 84, 1323-1325 (2004).

[4] A. Fujiwara, S. Horiguchi, M. Nagase, and Y. Takahashi: Threshold voltage of Si single-electron transistor, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 42, 2429-2433 (2003).

[5] A. Fujiwara, K. Yamazaki, and Y. Takahashi: Detection of single charges and their generation-recombination dynamics in Si nanowires at room temperature, Applied Physics Letters 80, 4567-4569 (2002).

[6] A. Fujiwara and Y. Takahashi: Mechanism of single-charge detection using electron-hole system in Si-wire transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 41, 1209-1213 (2002).

[7] A. Fujiwara and Y. Takahashi: Manipulation of elementary charge in a silicon charge-coupled device, Nature 410, 560-562 (2001).

[8] A. Fujiwara, Y. Takahashi, K. Yamazaki, H. Namatsu, M. Nagase, K. Kurihara, and K. Murase: Double-island single-electron devices - A useful unit device for single-electron logic LSI's, IEEE Transactions on Electron Devices 46, 954-959 (1999).

[9] A. Fujiwara, Y. Takahashi, H. Namatsu, K. Kurihara, and K. Murase: Suppression of effects of parasitic metal-oxide-semiconductor field-effect transistors on Si single-electron transistors, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 37, 3257-3263 (1998).

[10] A. Fujiwara, Y. Takahashi, and K. Murase: Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor, Physical Review Letters 78, 1532-1535 (1997).

[11] A. Fujiwara, Y. Takahashi, K. Murase, and M. Tabe: Time-Resolved Measurement of Single-Electron Tunneling in a Si Single-Electron Transistor with Satellite Si Islands, Applied Physics Letters 67, 2957-2959 (1995).

研究テーマ

シリコン単電子デバイス
シリコンナノ構造の物理

NTT 物性科学基礎研究所
〒243-0198 神奈川県
厚木市森の里若宮3-1

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藤原 聡（ふじわら あきら） 博士（工）

略歴

受賞暦